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Titolo:
EPITAXIAL MGO ON GAAS(111) AS A BUFFER LAYER FOR Z-CUT EPITAXIAL LITHIUM-NIOBATE
Autore:
FORK DK; ANDERSON GB;
Indirizzi:
XEROX CORP,PALO ALTO RES CTR,3333 COYOTE HILL RD PALO ALTO CA 94304
Titolo Testata:
Applied physics letters
fascicolo: 8, volume: 63, anno: 1993,
pagine: 1029 - 1031
SICI:
0003-6951(1993)63:8<1029:EMOGAA>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
PULSED LASER DEPOSITION; LINBO3 THIN-FILMS; MOLECULAR-BEAM EPITAXY; SINGLE-CRYSTAL; HETEROEPITAXIAL GROWTH; GAAS(001); GAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
D.K. Fork e G.B. Anderson, "EPITAXIAL MGO ON GAAS(111) AS A BUFFER LAYER FOR Z-CUT EPITAXIAL LITHIUM-NIOBATE", Applied physics letters, 63(8), 1993, pp. 1029-1031

Abstract

The epitaxial system z-lithium niobate on GaAs(111)A and GaAs(111)B has been demonstrated by in situ pulsed laser deposition both with and without intermediate layers of MgO(111). The in-plane epitaxial relationships are LiNbO3[110] parallel-to GaAs[211BAR] and [211BAR] indicating the existence of 180-degrees boundaries in the LiNbO3 both with andwithout the MgO layer, which grows cube-on-cube with the GaAs. Out-of-plane texture is typically 1.0-degrees and 1.2-degrees for the MgO and LiNbO3 layers, respectively. In-plane texture is typically 2.8-degrees and 4.5-degrees for the MgO and LiNbO3 layers, respectively. This epitaxial system may be useful for monolithic electro-optic or frequency doubling applications in conjunction with semiconductor laser diodes.

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Documento generato il 29/09/20 alle ore 04:20:12