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Titolo:
COMPARISON OF ZN1-XMNXTE ZNTE MULTIPLE-QUANTUM WELLS AND QUANTUM DOTSBY BELOW-BANDGAP PHOTOMODULATED REFLECTIVITY/
Autore:
KLAR PJ; WOLVERSON D; ASHENFORD DE; LUNN B; HENNING T;
Indirizzi:
UNIV E ANGLIA,SCH PHYS NORWICH NR4 7TJ NORFOLK ENGLAND UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND UNIV GOTHENBURG,DEPT PHYS S-41296 GOTHENBURG SWEDEN CHALMERS UNIV TECHNOL S-41296 GOTHENBURG SWEDEN
Titolo Testata:
Semiconductor science and technology
fascicolo: 12, volume: 11, anno: 1996,
pagine: 1863 - 1872
SICI:
0268-1242(1996)11:12<1863:COZZMW>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
DILUTED MAGNETIC SEMICONDUCTORS; PROCESS-INDUCED STRAINS; II-VI SEMICONDUCTORS; X-RAY-DIFFRACTION; OPTICAL-PROPERTIES; MIXED-CRYSTALS; WIRES; PHOTOREFLECTANCE; GAAS; NANOSTRUCTURES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
59
Recensione:
Indirizzi per estratti:
Citazione:
P.J. Klar et al., "COMPARISON OF ZN1-XMNXTE ZNTE MULTIPLE-QUANTUM WELLS AND QUANTUM DOTSBY BELOW-BANDGAP PHOTOMODULATED REFLECTIVITY/", Semiconductor science and technology, 11(12), 1996, pp. 1863-1872

Abstract

Large-area high-density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zno(0.93)Mn(0.07)Te/ZnTe multiple quantum well structures of different well width (40 Angstrom, 60 Angstrom, 80 Angstrom and 100 Angstrom) by electron lithography followed by Ar+ ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructures were then recorded at 10 K and the spectra were fitted to extract the linewidths and the energy positions of the excitonic transitions ineach sample. The fitted results are compared with calculations of thetransition energies in which the different strain states in the samples are taken into account. We show that the main effect of the nanofabrication process is a change in the strain state of the quantum dot samples compared with the parent heterostructures. The quantum dot pillars turn out to be freestanding, whereas the heterostructures are in a good approximation strained to the ZnTe lattice constant. The lateral size of the dots is such that extra confinement effects are not expected or observed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/03/20 alle ore 01:56:34