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Titolo: MISFIT DISLOCATIONS IN EPITAXIAL ZNTE GAAS (001) STUDIED BY HRTEM/
Autore: BAUER S; ROSENAUER A; LINK P; KUHN W; ZWECK J; GEBHARDT W;
 Indirizzi:
 UNIV REGENSBURG,INST FESTKORPERPHYS,UNIV STR 31 W8400 REGENSBURG GERMANY UNIV REGENSBURG,INST ANGEW PHYS W8400 REGENSBURG GERMANY
 Titolo Testata:
 Ultramicroscopy
fascicolo: 14,
volume: 51,
anno: 1993,
pagine: 221  227
 SICI:
 03043991(1993)51:14<221:MDIEZG>2.0.ZU;2H
 Fonte:
 ISI
 Lingua:
 ENG
 Soggetto:
 GROWN ZNTE LAYERS; ELECTRONMICROSCOPY; PHOTOLUMINESCENCE;
 Tipo documento:
 Article
 Natura:
 Periodico
 Settore Disciplinare:
 Science Citation Index Expanded
 Citazioni:
 13
 Recensione:
 Indirizzi per estratti:



 Citazione:
 S. Bauer et al., "MISFIT DISLOCATIONS IN EPITAXIAL ZNTE GAAS (001) STUDIED BY HRTEM/", Ultramicroscopy, 51(14), 1993, pp. 221227
Abstract
Singlecrystalline ZnTe epilayers were grown by atmosphericpressure metal organic vapor phase epitaxy (MOVPE) and hot wall epitaxy (HWE) on (001) GaAs. The misfit of lattice constants is  7.5% at the growth temperature of 350degreesC. Conventional transmission electron microscopy (TEM) and highresolution transmission electron microscopy (HRTEM) have been used to investigate the misfit dislocations in the ZnTe/GaAs (001) system. The types and distribution of the observed dislocations are independent of growth techniques used. The most common line defects at the ZnTe/GaAs interface are 60degrees and Lomer dislocationswith Burgers vectors of 1/2a[110]. Their respective abundance ratio 2:1. Less than 3% of the 60degrees dislocations dissociate into partial dislocations limiting a stacking fault. The distances between parallel {111} planes terminating at the interface have been determined froman analysis of about 1 mum of the projected ZnTe/GaAs interface. The distribution fits by a Gaussian with an average distance of 57 angstrom. This allows an estimate of the residual biaxial strain at the interface which is found to be compressive with a magnitude less than 0.6%. The distances of the observed dislocation cores form a histogram. Itsspecial shape shows four maxima at about 0, 5, 9 and 12 x 1/2a(s)[110]. They can be explained by a model for the correlated nucleation of misfit dislocations in highly mismatched heterostructures like ZnTe/GaAs.
ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 20:44:31