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Titolo:
MISFIT DISLOCATIONS IN EPITAXIAL ZNTE GAAS (001) STUDIED BY HRTEM/
Autore:
BAUER S; ROSENAUER A; LINK P; KUHN W; ZWECK J; GEBHARDT W;
Indirizzi:
UNIV REGENSBURG,INST FESTKORPERPHYS,UNIV STR 31 W-8400 REGENSBURG GERMANY UNIV REGENSBURG,INST ANGEW PHYS W-8400 REGENSBURG GERMANY
Titolo Testata:
Ultramicroscopy
fascicolo: 1-4, volume: 51, anno: 1993,
pagine: 221 - 227
SICI:
0304-3991(1993)51:1-4<221:MDIEZG>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWN ZNTE LAYERS; ELECTRON-MICROSCOPY; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
S. Bauer et al., "MISFIT DISLOCATIONS IN EPITAXIAL ZNTE GAAS (001) STUDIED BY HRTEM/", Ultramicroscopy, 51(1-4), 1993, pp. 221-227

Abstract

Single-crystalline ZnTe epilayers were grown by atmospheric-pressure metal organic vapor phase epitaxy (MOVPE) and hot wall epitaxy (HWE) on (001) GaAs. The misfit of lattice constants is - 7.5% at the growth temperature of 350-degrees-C. Conventional transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) have been used to investigate the misfit dislocations in the ZnTe/GaAs (001) system. The types and distribution of the observed dislocations are independent of growth techniques used. The most common line defects at the ZnTe/GaAs interface are 60-degrees and Lomer dislocationswith Burgers vectors of 1/2a[110]. Their respective abundance ratio 2:1. Less than 3% of the 60-degrees dislocations dissociate into partial dislocations limiting a stacking fault. The distances between parallel {111} planes terminating at the interface have been determined froman analysis of about 1 mum of the projected ZnTe/GaAs interface. The distribution fits by a Gaussian with an average distance of 57 angstrom. This allows an estimate of the residual biaxial strain at the interface which is found to be compressive with a magnitude less than 0.6%. The distances of the observed dislocation cores form a histogram. Itsspecial shape shows four maxima at about 0, 5, 9 and 12 x 1/2a(s)[110]. They can be explained by a model for the correlated nucleation of misfit dislocations in highly mismatched heterostructures like ZnTe/GaAs.

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Documento generato il 29/09/20 alle ore 20:44:31