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Titolo:
PHASE-FORMATION SEQUENCES IN THE SILICON-PHOSPHORUS SYSTEM - DETERMINED BY IN-SITU SYNCHROTRON AND CONVENTIONAL X-RAY-DIFFRACTION MEASUREMENTS AND PREDICTED BY A THEORETICAL-MODEL
Autore:
CARLSSON JRA; CLEVENGER L; MADSEN LD; HULTMAN L; LI XH; JORDANSWEET J; LAVOIE C; ROY RA; CABRAL C; MORALES G; LUDWIG KL; STEPHENSON GB; HENTZELL HTG;
Indirizzi:
UNIV ILLINOIS,COORDINATED SCI LAB,1101 W SPRINGFIELD AVE,ENGN SCI BLDG URBANA IL 61801 LINKOPING UNIV,DEPT PHYS,DIV THIN FILM S-58183 LINKOPING SWEDEN IBM CORP,THOMAS J WATSON RES CTR YORKTOWN HTS NY 10598 BOSTON UNIV,DEPT PHYS BOSTON MA 02215
Titolo Testata:
Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic
fascicolo: 3, volume: 75, anno: 1997,
pagine: 363 - 376
SICI:
1364-2812(1997)75:3<363:PSITSS>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
NUCLEATION; SILICIDES; COUPLES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
J.R.A. Carlsson et al., "PHASE-FORMATION SEQUENCES IN THE SILICON-PHOSPHORUS SYSTEM - DETERMINED BY IN-SITU SYNCHROTRON AND CONVENTIONAL X-RAY-DIFFRACTION MEASUREMENTS AND PREDICTED BY A THEORETICAL-MODEL", Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(3), 1997, pp. 363-376

Abstract

The phase formation sequences of Si-P alloy thin films with P concentrations between 20 and 44at.% have been studied. The samples were annealed at progressively higher temperatures and the newly formed phases were identified both after each annealing step by ex-situ conventionalX-ray diffraction (XRD) and continuously by in-situ synchrotron XRD. It was found that Si was the only phase to form in a sample with 20at.% P since the evaporation of P at the crystallization temperature prevented phosphides from forming. For a sample with 30at.% P, the Si12P5 phase formed prior to the SiP phase. For samples with 35 and 44at.% P,the formation of SiP preceded the formation of the Si12P5 phase. The experimentally determined phase formation sequences were successfully predicted by a proposed model. According to the model, the first and second crystalline phases to form are those with the lowest and next-lowest crystallization temperatures of the competing compounds predictedby the Gibbs free-energy diagram.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 15:21:19