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Titolo:
DIFFUSION AND ELECTRICAL BEHAVIOR OF AL IMPLANTED INTO CAPPED SI
Autore:
SCANDURRA A; GALVAGNO G; RAINERI V; FRISINA F; TORRISI A;
Indirizzi:
CONSORZIO CATANIA RICERCHE I-95125 CATANIA ITALY CNR,IST METODOL & TECNOL MICROELETTR I-95129 CATANIA ITALY UNIV CATANIA,DIPARTIMENTO FIS I-95129 CATANIA ITALY ST MICROELECTR I-95100 CATANIA ITALY UNIV CATANIA,DIPARTIMENTO SCI CHIM I-95125 CATANIA ITALY
Titolo Testata:
Journal of the Electrochemical Society
fascicolo: 7, volume: 140, anno: 1993,
pagine: 2057 - 2062
SICI:
0013-4651(1993)140:7<2057:DAEBOA>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
ALUMINUM; SILICON; DEVICES; DEFECTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
A. Scandurra et al., "DIFFUSION AND ELECTRICAL BEHAVIOR OF AL IMPLANTED INTO CAPPED SI", Journal of the Electrochemical Society, 140(7), 1993, pp. 2057-2062

Abstract

The diffusion and the electrical behavior of Al implanted in the doserange of 1 X 10(13) to 5 X 10(15) cm-2 at 300 keV in capped and uncapped Si is investigated. The Al-based precipitates which are formed when Al concentration exceeds its solid solubility in Si are electricallyinactive. The out-diffusion phenomenon that is always present in uncapped samples reduces the Al dose diffused into Si substrate. A study on the electrical activity of Al implanted in Si through SiO2, Si3N4, and Si3N4/SiO2 capping films also is presented. In these capped samplesAl segregation in SiO2 layer occurs. The electrically active doses are small and comparable to that of uncapped samples. We studied the diffusivity of Al in bulk SiO2 and Si3N4 at 1200-degrees-C. The fast Al diffusion through SiO2 thin layers is driven by a chemical reaction between Al and SiO2 starting from the SiO2/Si interface.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 14:56:00