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Titolo:
EVIDENCE OF A LAMELLAR MICROSTRUCTURE IN BETA-FESI2 THIN-FILMS GROWN ON SI(111) BY SOLID-PHASE EPITAXY - A TRANSMISSION ELECTRON-MICROSCOPYANALYSIS
Autore:
ZHENG Y; TACCOEN A; GANDAIS M; PETROFF JF;
Indirizzi:
UNIV PARIS 06,MINERAL CRISTALLOG LAB,4 PL JUSSIEU F-75252 PARIS 05 FRANCE UNIV PARIS 07,CNRS,URA 09 F-75252 PARIS 05 FRANCE
Titolo Testata:
Journal of applied crystallography
, volume: 26, anno: 1993,
parte:, 3
pagine: 388 - 395
SICI:
0021-8898(1993)26:<388:EOALMI>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
Y. Zheng et al., "EVIDENCE OF A LAMELLAR MICROSTRUCTURE IN BETA-FESI2 THIN-FILMS GROWN ON SI(111) BY SOLID-PHASE EPITAXY - A TRANSMISSION ELECTRON-MICROSCOPYANALYSIS", Journal of applied crystallography, 26, 1993, pp. 388-395

Abstract

Thin films of beta-FeSi2, grown on Si(111) by the technique of solid-phase epitaxy (SPE) in ultra-high vacuum (UHV) conditions, were analysed by transmission electron microscopy (TEM). The expected epitaxies, beta-FeSi2(101)/Si(111) and beta-FeSi2(110)/Si(111), were detected forfilm thicknesses smaller than approximately 250 angstrom. The presentanalysis reveals an unusual microstructure: the films are composed ofvery thin lamellae (5-30 angstrom) of both orientations induced by planar defects. Such lamellar films are strained, with a parameter shiftestimated to be about 0.4%. For these films, grain sizes in the mum range were obtained and the interface roughness increased with increasing film thickness. An unexpected film orientation, beta-FeSi2(100)/Si(111), was also found.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 16/07/20 alle ore 05:24:32