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Titolo:
LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION
Autore:
KIM YS; OKADA Y; CHANG KM; TOBIN PJ; MORTON B; CHOE H; BOWERS M; KUO C; CHRUDIMSKY D; AJURIA SA; YEARGAIN JR;
Indirizzi:
CHUNG BUK NATL UNIV CHUNGBUK 360763 SOUTH KOREA MOTOROLA INC,ADV PROD RES & DEV LAB AUSTIN TX 78721 MOTOROLA INC,DIV ADV MICROCONTROLLER AUSTIN TX 78735
Titolo Testata:
IEEE electron device letters
fascicolo: 7, volume: 14, anno: 1993,
pagine: 342 - 344
SICI:
0741-3106(1993)14:7<342:LAHFEF>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
REOXIDIZED NITRIDED OXIDES; BREAKDOWN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
Y.S. Kim et al., "LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION", IEEE electron device letters, 14(7), 1993, pp. 342-344

Abstract

The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROM's fabricated using a furnace N2O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-water.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/03/20 alle ore 09:25:25