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Titolo:
CLUSTER MODEL STUDY ON GAAS EPITAXIAL CRYSTAL-GROWTH BY ARSENIC MOLECULAR-BEAM .2. MECHANISM INVOLVING A GAAS2 INTERMEDIATE CLUSTER
Autore:
FUKUNISHI Y; NAKATSUJI H;
Indirizzi:
KYOTO UNIV,FAC ENGN,DEPT SYNTHET CHEM,SAKYO KU KYOTO 606 JAPAN INST FUNDAMENTAL CHEM,SAKYOU KU KYOTO 606 JAPAN
Titolo Testata:
Surface science
fascicolo: 1-2, volume: 291, anno: 1993,
pagine: 281 - 290
SICI:
0039-6028(1993)291:1-2<281:CMSOGE>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
VAPOR-PHASE EPITAXY; INTERACTION KINETICS; 111 SURFACE; STATES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
Y. Fukunishi e H. Nakatsuji, "CLUSTER MODEL STUDY ON GAAS EPITAXIAL CRYSTAL-GROWTH BY ARSENIC MOLECULAR-BEAM .2. MECHANISM INVOLVING A GAAS2 INTERMEDIATE CLUSTER", Surface science, 291(1-2), 1993, pp. 281-290

Abstract

The mechanisms of the GaAs epitaxial crystal growth by Ga atomic and As2 molecular beams on Ga-stabilized and As-stabilized GaAs(100) surfaces are studied with the use of the cluster model and the Hartree-Fockmethod. We propose the mechanism involving the formation of the GaAs2Cluster as an intermediate. When the As2 beam is irradiated on the surface, the GaAs2 cluster is generated from As2 and a free Ga atom without energy barrier. This GaAs2 is adsorbed on the As-stabilized surface and gives a new Ga-layer on the surface and the As2 remains to the molecularly adsorbed on the new Ga layer without an activation energy. On the other hand, the adsorption of this GaAs2 on the Ga-stabilized surface gives a new As layer and the remaining Ga atom migrates on the surface to make a new Ga layer. The mechanism involving the dissociative adsorption of As2 studied previously and the presently proposed mechanism involving the GaAs2 intermediate cluster are compared and it isconcluded that the present mechanism is more favorable than the previous one. We summarize the overall reaction mechanism of the GaAs epitaxial crystal growth by the Ga atomic and As2 molecular beams.

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Documento generato il 24/09/20 alle ore 07:01:13