Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
THE GE STRANSKI-KRASTANOV GROWTH MODE ON SI(001)(2X1) TESTED BY X-RAYPHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION
Autore:
DIANI M; AUBEL D; BISCHOFF JL; KUBLER L; BOLMONT D;
Indirizzi:
UNIV HAUTE ALSACE,FAC SCI & TECH,LPSE,CNRS,URA 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE
Titolo Testata:
Surface science
fascicolo: 1-2, volume: 291, anno: 1993,
pagine: 110 - 116
SICI:
0039-6028(1993)291:1-2<110:TGSGMO>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXIAL-GROWTH; SI(100)-2X1 SURFACE; INITIAL-STAGES; FILMS; SI; LAYER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
21
Recensione:
Indirizzi per estratti:
Citazione:
M. Diani et al., "THE GE STRANSKI-KRASTANOV GROWTH MODE ON SI(001)(2X1) TESTED BY X-RAYPHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION", Surface science, 291(1-2), 1993, pp. 110-116

Abstract

X-ray photoelectron and Auger electron diffractions have been used here for the first time to identify growth morphology in the earliest stages (0-10 monolayers) of Ge epitaxy on Si(001)(2 x 1) surfaces held at room temperature (RT) and at 400-degrees-C. The Ge atomic arrangement in the (110BAR) plane is examined by performing polar angle distribution of the Ge LMM intensities and by comparison with the corresponding Si2p substrate pattern. A detailed plot as a function of the Ge coverage of the forward scattering peak contrasts in the [111] and [001] directions, which correspond to the 1st and 3rd atomic neighbour rows, respectively, yields informations about the layer number distribution and the growth mode. Contrarily to the nearly two-dimensional (2D) growth taking place at RT, we obtain a 3D island formation at 400-degrees-C for a critical thickness exceeding 5 ML. Nevertheless, in the coverage domain between 2 and 5 ML for which layer-by-layer growth is normally expected, the observation of a significant up to 4 ML roughness across the surface prefigurates the islanding process and confirms very recent STM reports. Photoelectron scattering results are only consistent with pure 2D formation during the first 2 ML growth.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 21:33:38