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Titolo:
ENVIRONMENTS OF ION-IMPLANTED DOPANTS IN AMORPHOUS-SILICON AT VARIOUSSTAGES OF ANNEALING
Autore:
GREAVES GN; DENT AJ; DOBSON BR; KALBITZER S; MULLER G;
Indirizzi:
SERC,DARESBURY LAB WARRINGTON WA4 4AD CHESHIRE ENGLAND MESSERSCHMITT BOELKOW BLOHM GMBH W-8000 MUNICH 80 GERMANY MAX PLANCK INST NUCL PHYS W-6900 HEIDELBERG 1 GERMANY
Titolo Testata:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
, volume: 80-1, anno: 1993,
parte:, 2
pagine: 966 - 972
SICI:
0168-583X(1993)80-1:<966:EOIDIA>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
CURVED-WAVE THEORY; EXAFS CALCULATIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
G.N. Greaves et al., "ENVIRONMENTS OF ION-IMPLANTED DOPANTS IN AMORPHOUS-SILICON AT VARIOUSSTAGES OF ANNEALING", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 966-972

Abstract

Glancing angle X-ray absorption fine structure (XAFS) spectroscopy has been used to record the varying environments of Ga and As impuritiesion-implanted in amorphous silicon (a-Si) - both glow discharge (gd) deposited and amorphised by ion beam damage (ii). Apart from small differences in coordination number and Debye-Waller factor due to the presence of hydrogen in gd material the environments for the same impurity in the two forms of a-Si are almost indistinguishable. The electronic activity of gd a-Si is therefore directly attributable to the lower density of intrinsic defects compared to ii a-Si. The coordination numbers of impurities in as-implanted material are found to differ from those of a-Si at various stages of anneal. Ga, for instance, falls from3.8 (room temperature) to 3 (400-degrees-C) demonstrating a substantial change in the balance between tetrahedral and naturally bonded sites. Coordination numbers of both Ga and As increase for annealing at 700-degrees-C and the onset of crystallisation is identified in the appearance of outer shells of atoms in the impurity environments. Crystallisation, however, is only partial (approximately 25%) at this temperature even though thermal epitaxial regrowth of the majority of the Si matrix is complete. Clearly recrystallisation of a-Si is inhibited in the vicinity of naturally bonded dopant sites.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 10:02:05