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Titolo:
THE ROLE OF EMITTER STATES IN MAGNETOTUNNELING THROUGH DOUBLE-BARRIERRESONANT-TUNNELING DIODES AT HIGH MAGNETIC-FIELDS
Autore:
KAMATA N; YAMADA K; MIURA N; EAVES L;
Indirizzi:
SAITAMA UNIV,DEPT FUNCT MAT SCI & ENGN,255 SHIMO OHKUBO URAWA SAITAMA338 JAPAN UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU TOKYO 106 JAPAN UNIV NOTTINGHAM,DEPT PHYS NOTTINGHAM NG7 2RD ENGLAND
Titolo Testata:
Journal of the Physical Society of Japan
fascicolo: 6, volume: 62, anno: 1993,
pagine: 2120 - 2128
SICI:
0031-9015(1993)62:6<2120:TROESI>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
TUNNELLING STRUCTURES; DEVICES; HETEROSTRUCTURES; SPECTROSCOPY; BISTABILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
N. Kamata et al., "THE ROLE OF EMITTER STATES IN MAGNETOTUNNELING THROUGH DOUBLE-BARRIERRESONANT-TUNNELING DIODES AT HIGH MAGNETIC-FIELDS", Journal of the Physical Society of Japan, 62(6), 1993, pp. 2120-2128

Abstract

By applying pulsed high magnetic fields up to 40 T perpendicular (B(perpendicular-to) perpendicular-to I) and parallel (B(parallel-to) parallel-to I) to the current direction, a distinct role of emitter statesin the magneto-tunneling processes through resonant tunneling diodes has been investigated. The B(perpendicular-to) dependence of the threshold voltage in current vs. voltage (I-V) curves has been explained consistently by tunneling from a combined magneto-electric state of a 1-dimensional (1D) emitter to that of a 0-dimensional (0D) well state. We observed a drastic current decrease above B(parallel-to) = 10 T under constant applied voltage below the negative differential conductivity region together with multi-peaked I-V curves with hysteresis at above B(parallel-to) = 30 T. These distinct features were analyzed by a self-consistent model of the charge build-up effect and the energy configuration of the 0D emitter, 1D emitter and 0D well states.

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Documento generato il 01/04/20 alle ore 11:39:49