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Titolo:
V AND TI DOPING EFFECT ON IN-AG-TE-SB OPTICAL-PHASE CHANGE REWRITABLEDISC
Autore:
TOMINAGA J; HANDA T; HARATANI S; TAKAYAMA S;
Indirizzi:
TDK,CHIKUMAGAWA TECH CTR 1,462-1 OTAI NAGANO 38902 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 5A, volume: 32, anno: 1993,
pagine: 1980 - 1982
SICI:
0021-4922(1993)32:5A<1980:VATDEO>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Keywords:
PHASE CHANGE; CHALCOPYRITE; AG-IN-SB-TE; OPTICAL DISC; ELECTRICAL PROPERTIES; TI; V;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
J. Tominaga et al., "V AND TI DOPING EFFECT ON IN-AG-TE-SB OPTICAL-PHASE CHANGE REWRITABLEDISC", JPN J A P 1, 32(5A), 1993, pp. 1980-1982

Abstract

In-Ag-Te-Sb is known as one of the alloys suitable for optical phase change recording, which has a high erasability at the linear recordingvelocity of around 7 m/s. The phase change rewritable recording succeeded at the linear recording velocity of 1.4 m/s with 0.5 at.% doping of Ti or V atoms, which delayed the crystallization time drastically, but maintained the high erasability. It was possible to make 10(3) repetition recordings with jitter in the reproduced signal of less than 40 ns, when the eight-fourteen modulation (EFM) signal, which is generally used for compact discs (CD), was applied.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 08:24:47