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Titolo:
DEPENDENCE OF OPEN-CIRCUIT VOLTAGE OF AMORPHOUS-SILICON SOLAR-CELLS ON THICKNESS AND DOPING LEVEL OF THE P-LAYER
Autore:
ISOMURA M; TAKAHAMA T; TSUDA S; NAKANO S;
Indirizzi:
SANYO ELECT CO LTD,FUNCT MAT RES CTR,1-18-13 HASHIRIDANI HIRAKATA OSAKA 573 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 5A, volume: 32, anno: 1993,
pagine: 1902 - 1907
SICI:
0021-4922(1993)32:5A<1902:DOOVOA>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
QUALITY; PERFORMANCE; EFFICIENCY; FILMS;
Keywords:
AMORPHOUS; SOLAR CELL; OPEN CIRCUIT VOLTAGE; LIGHT-INDUCED DEGRADATION; BORON DOPING; DEFECT DENSITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
M. Isomura et al., "DEPENDENCE OF OPEN-CIRCUIT VOLTAGE OF AMORPHOUS-SILICON SOLAR-CELLS ON THICKNESS AND DOPING LEVEL OF THE P-LAYER", JPN J A P 1, 32(5A), 1993, pp. 1902-1907

Abstract

We have focused on the thickness and the boron-doping concentration of the p-layer of amorphous silicon solar cells and systematically obtained data for open circuit voltage (V(proportional-to)) and the built-in potential to reveal the mechanism causing a high V(proportional-to). A highly doped p-layer gives a higher built-in potential in the entire thickness range, but V(proportional-to) is limited by the carrier recombination caused by the doping-induced defects. A low-doped p-layercauses a higher V(proportional-to) in a sufficiently thick film because less carrier recombination occurs due to the lower density of the doping-induced defects. After light-soaking, significant V(proportional-to) degradation occurs with the low-doped p-layer. The light-induced defects are not negligible compared with the initial defects in the low-doped p-layer and thus more carrier recombination occurs. Moreover, some of the acceptors are compensated by light-induced defects. The highly doped p-layer, however, does not cause much V(proportional-to) degradation because the light-induced defects are negligible compared with the large number of doping-induced defects and acceptors. The experimental data show that the midgap defects induced by doping or light-soaking near the p/i interface cause the V(proportional-to) limitation.

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Documento generato il 29/11/20 alle ore 06:45:18