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Titolo:
THE EFFECTS ON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR PROPERTIES OF NITROGEN IMPLANTATION INTO P(+) POLYSILICON GATE
Autore:
YASUOKA A; KUROI T; SHIMIZU S; SHIRAHATA M; OKUMURA Y; INOUE Y; INUISHI M; NISHIMURA T; MIYOSHI H;
Indirizzi:
MITSUBISHI ELECTR CORP,ULSI LAB,4-1 MIZUHARA ITAMI HYOGO 664 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2, volume: 36, anno: 1997,
pagine: 617 - 622
SICI:
0021-4922(1997)36:2<617:TEOMFT>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION-IMPLANTATION; FLUORINE; IMPROVEMENT; SI;
Keywords:
SILICON; SURFACE CHANNEL PMOS; NITROGEN ION IMPLANTATION; BORON PENETRATION; NITRIDED OXIDE FILM; HOT-CARRIER DEGRADATION; OXIDE RELIABILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
A. Yasuoka et al., "THE EFFECTS ON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR PROPERTIES OF NITROGEN IMPLANTATION INTO P(+) POLYSILICON GATE", JPN J A P 1, 36(2), 1997, pp. 617-622

Abstract

We have studied in detail the effects of nitrogen implantation into ap(+) polysilicon gate on gate oxide properties for the surface p-channel metal oxide semiconductor (PMOS) below 0.25 mu m. The nitrided oxide film can be easily formed by the pile-up of nitrogen into the gate oxide film from the polysilicon gate. It was found that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into a p(+) polysilicon gate because nitrogen in the polysilicon film can suppress boron diffusion, and the nitrided oxide film can also act as a barrier to boron diffusion. Moreover the hot-carrier hardness can be remarkably improved by the nitrided oxide film since interface state generation can be suppressed by the nitrided oxide film. Furthermore the number of electron traps in the gate oxide film can also be reduced by nitrogen implantation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/11/20 alle ore 10:20:27