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Titolo:
TRANSIENT-RESPONSE OF LATERAL PHOTODETECTORS
Autore:
BOTTCHER EH; HIERONYMI F; KUHL D; DROGE E; BIMBERG D;
Indirizzi:
TECH UNIV BERLIN,INST FESTKORPERPHYS,HARDENBERGSTR 36 W-1000 BERLIN 12 GERMANY
Titolo Testata:
Applied physics letters
fascicolo: 18, volume: 62, anno: 1993,
pagine: 2227 - 2229
SICI:
0003-6951(1993)62:18<2227:TOLP>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR-METAL PHOTODETECTORS; PHOTOCONDUCTIVE DETECTOR;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
E.H. Bottcher et al., "TRANSIENT-RESPONSE OF LATERAL PHOTODETECTORS", Applied physics letters, 62(18), 1993, pp. 2227-2229

Abstract

A two-dimensional physical device model for characterizing the transient operation of lateral photodetectors is presented. It is based upona corpuscular approach where the impulse response is constituted by the superposition of a large number of photocurrent pulses originating from spatially distributed discrete electron-hole pairs generated by an optical impulse. The motion of photogenerated carriers and the resulting photocurrent pulses in the external circuit are related by Ramo'stheorem which is shown to be fundamental for gaining a correct understanding of the time response of lateral detectors. The accuracy of thepredictions obtained from the modeling is underpinned by their excellent agreement with experimental data on the impulse response of InP:Fe/InGaAs:Fe metal-semiconductor-metal detectors.

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Documento generato il 02/07/20 alle ore 19:20:37