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Titolo:
SURFACE-EMITTING DEVICES WITH DISTRIBUTED BRAGG REFLECTORS GROWN BY HIGHLY PRECISE MOLECULAR-BEAM EPITAXY
Autore:
SUGIMOTO M; OGURA I; SAITO H; YASUDA A; KURIHARA K; KOSAKA H; NUMAI T; KASAHARA K;
Indirizzi:
NEC CORP LTD,OPTOELECTR RES LABS,34 MIYUKIGAOKA TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 127, anno: 1993,
pagine: 1 - 4
SICI:
0022-0248(1993)127:1-4<1:SDWDBR>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
VERTICAL-CAVITY; LASERS; DIODES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
M. Sugimoto et al., "SURFACE-EMITTING DEVICES WITH DISTRIBUTED BRAGG REFLECTORS GROWN BY HIGHLY PRECISE MOLECULAR-BEAM EPITAXY", Journal of crystal growth, 127(1-4), 1993, pp. 1-4

Abstract

We realized extremely high absolute thickness controllability around /-0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Braggreflectors.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 18:45:46