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Titolo:
FIELD ION-SCANNING TUNNELING MICROSCOPE INVESTIGATION OF SODIUM ADSORPTION ON THE GAAS(110)1X1 SURFACE
Autore:
BAI C; HASHIZUME T; JEON D; SAKURAI T;
Indirizzi:
UNIV TOKYO,DEPT MAT RES TOKYO 113 JAPAN ACAD SINICA,INST CHEM BEIJING 100080 PEOPLES R CHINA MYONG JI UNIV,DEPT PHYS SEOUL 449928 SOUTH KOREA
Titolo Testata:
Applied surface science
fascicolo: 1-4, volume: 67, anno: 1993,
pagine: 252 - 256
SICI:
0169-4332(1993)67:1-4<252:FITMIO>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRONIC-PROPERTIES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
C. Bai et al., "FIELD ION-SCANNING TUNNELING MICROSCOPE INVESTIGATION OF SODIUM ADSORPTION ON THE GAAS(110)1X1 SURFACE", Applied surface science, 67(1-4), 1993, pp. 252-256

Abstract

A field ion-scanning tunneling microscope has been employed to study the geometry and the coverage-dependent growth structures formed by Nadeposition on the GaAs(110) surface at room temperature. Our data showed that at the early absorption stage Na adatoms reside on bridge sites encompassing one Ga and two As surface atoms to form linear chains along the [110BAR] direction. The Na-Na nearest-neighbor distance in this low density chain structure is 8 angstrom. At slightly increased coverage, a local 2 x 2 structure was observed. In contrast to the Cs/GaAs(110) surface, neither a two-dimensional ordered structure nor low-density zigzag chains were observed. Additional Na adsorption resultedin the formation of three-dimensional disordered clusters.

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Documento generato il 24/11/20 alle ore 21:50:51