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Titolo:
PHOTOCHEMICAL DECOMPOSITION OF TRIETHYLGALLIUM ON SI(111) STUDIED BY MEANS OF STM, LEED, AES AND MASS-SPECTROSCOPY
Autore:
INUKAI J; MIZUTANI W; FUKUI K; SHIMIZU H; IWASAWA Y;
Indirizzi:
KEIO UNIV,FAC SCI & TECHNOL,DEPT CHEM,3-14-1 HIYOSHI,KOHOKU KU YOKOHAMA KANAGAWA 223 JAPAN UNIV TOKYO,FAC SCI,DEPT CHEM,BUNKYO KU TOKYO 113 JAPAN ELECTROTECH LAB,SURFACE ENGN SECT TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4, volume: 32, anno: 1993,
pagine: 1768 - 1771
SICI:
0021-4922(1993)32:4<1768:PDOTOS>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
ATOMIC LAYER EPITAXY; VAPOR-PHASE EPITAXY; KRF EXCIMER LASER; GAAS; GROWTH; SURFACE; PRECURSORS; GAAS(100); GALLIUM; SI(100);
Keywords:
SURFACE PHOTOCHEMICAL DECOMPOSITION; GA(C2H5)3; SI(111); UV LIGHT; LEED; AES; STM; MASS SPECTROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
36
Recensione:
Indirizzi per estratti:
Citazione:
J. Inukai et al., "PHOTOCHEMICAL DECOMPOSITION OF TRIETHYLGALLIUM ON SI(111) STUDIED BY MEANS OF STM, LEED, AES AND MASS-SPECTROSCOPY", JPN J A P 1, 32(4), 1993, pp. 1768-1771

Abstract

Adsorption and photochemical decomposition of triethylgallium [Ga(C2H5)3] on Si(111) at room temperature were investigated by means of low-energy electron diffraction (LEED), Auger electron spectroscopy (AES),scanning tunneling microscopy (STM) and mass spectroscopy (MS). Ga(C2H5)3 was adsorbed on Si(111) until its saturation, at which point LEEDand STM indicated disordered adsorption of the molecules. Irradiationof ultraviolet light onto the Ga(C2H5)3-saturated surface caused carbon incorporation contrary to the case of pyrolysis. Ethyl species wereproposed to result from the photon absorption processes of the molecules.

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Documento generato il 23/09/20 alle ore 15:25:39