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Titolo:
NEW STRUCTURAL SYSTEMATICS IN THE II-VI, III-V, AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE
Autore:
MCMAHON MI; NELMES RJ;
Indirizzi:
UNIV EDINBURGH,DEPT PHYS & ASTRON EDINBURGH EH9 3JZ MIDLOTHIAN SCOTLAND
Titolo Testata:
Physica status solidi. b, Basic research
fascicolo: 1, volume: 198, anno: 1996,
pagine: 389 - 402
SICI:
0370-1972(1996)198:1<389:NSSITI>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-TRANSITIONS; INSB; GPA; CDTE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
27
Recensione:
Indirizzi per estratti:
Citazione:
M.I. Mcmahon e R.J. Nelmes, "NEW STRUCTURAL SYSTEMATICS IN THE II-VI, III-V, AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE", Physica status solidi. b, Basic research, 198(1), 1996, pp. 389-402

Abstract

A systematic study of the II-VI, III-V, and group-IV semiconductors using angle-dispersive diffraction techniques is revealing new structures and transitions that significantly modify tile accepted structural systematics of these materials. Recent new results from Ge, ZnSe, InSb, and GaAs extend the range of some aspects already indicated by our previous work, and new intermediate phases have been found in InSb, andin HgSe and HgTe.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 08:51:36