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Titolo:
ENVIRONMENTS OF ION-IMPLANTED AS AND GA IMPURITIES IN AMORPHOUS-SILICON
Autore:
GREAVES GN; DENT AJ; DOBSON BR; KALBITZER S; PIZZINI S; MULLER G;
Indirizzi:
SERC,DARESBURY LAB WARRINGTON WA4 4AD CHESHIRE ENGLAND UNIV KEELE,DEPT CHEM KEELE ST5 5BG STAFFS ENGLAND MAX PLANCK INST NUCL PHYS W-6900 HEIDELBERG 1 GERMANY UNIV STRATHCLYDE,DEPT PURE & APPL CHEM GLASGOW G1 1XL SCOTLAND GESELL BESCHRANKTER HAFTUNG,MESSERSCHMITT BOELKOW BLOHM O-8000 MUNICH80 GERMANY
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 12, volume: 45, anno: 1992,
pagine: 6517 - 6533
SICI:
0163-1829(1992)45:12<6517:EOIAAG>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
ABSORPTION FINE-STRUCTURE; EXTENDED X-RAY; A-SI-H; CURVED-WAVE THEORY; EXAFS CALCULATIONS; DEFECT STATES; ALLOYS; GLASS;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
43
Recensione:
Indirizzi per estratti:
Citazione:
G.N. Greaves et al., "ENVIRONMENTS OF ION-IMPLANTED AS AND GA IMPURITIES IN AMORPHOUS-SILICON", Physical review. B, Condensed matter, 45(12), 1992, pp. 6517-6533

Abstract

Glancing-angle x-ray-absorption fine-structure experiments are reported for arsenic and gallium implants in amorphous silicon. Total impurity concentrations range from 5 x 10(19) to 10(21) atoms cm-3. The effects of hydrogen and chemical compensation have been explored. The hydrogen concentration in the films has been derived from the critical angle for total external reflection. Evidence is found for extra hydrogenbound to impurities. The presence of phosphorus causes gallium to adopt fourfold-coordinated sites. From the shape of the fine-structure envelope, more than one impurity site has been established. In particular, both arsenic and gallium exhibit a minority well-ordered site that we propose provides the source of electronically active centers. This assertion is supported by structural differences resulting from chemical compensation and also thermal annealing of ion-implanted films. As the impurity dilution increases, an approximate correspondence has been found between the densities of these well-ordered sites and those reported for dangling-bond silicon states in hydrogenated amorphous silicon.

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Documento generato il 25/09/20 alle ore 22:13:10