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Titolo:
DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS
Autore:
AARIK J; AIDLA A; KUKLI K; UUSTARE T;
Indirizzi:
TARTU STATE UNIV,INST EXPTL PHYS & TECHNOL TARTU 2400 EE ESTONIA
Titolo Testata:
Journal of crystal growth
fascicolo: 1-2, volume: 144, anno: 1994,
pagine: 116 - 119
SICI:
0022-0248(1994)144:1-2<116:DAEOTO>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
TA2O5;
Tipo documento:
Letter
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
J. Aarik et al., "DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS", Journal of crystal growth, 144(1-2), 1994, pp. 116-119

Abstract

Effects of the reactor temperature and TaCl5-precursor dose on the atomic layer epitaxy (ALE) growth of tantalum oxide films are studied. It is shown that etching takes place instead of growth when high TaCl5 doses are used. The etching rate is enhanced by increase of the reactor temperature. In the case of optimum precursor doses, a growth rate equal to 0.06 nm per cycle was obtained at 300 degrees C growth temperature.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 12:55:53