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Titolo:
CHARACTERIZATION STUDY OF STRAINED INXGA1-XAS GAAS SUPERLATTICES
Autore:
DAPKUS L; JASUTIS V; KACIULIS S; LESCINSKAS D; MATTOGNO G; STAKVILEVICIUS L; TREIDERIS G; VITICOLI S;
Indirizzi:
SEMICOND PHYS INST,GOSTAUTO 11 VILNIUS 2600 LITHUANIA CNR,IST CHIM MAT I-00016 ROME ITALY
Titolo Testata:
Journal of applied physics
fascicolo: 10, volume: 76, anno: 1994,
parte:, 1
pagine: 5738 - 5743
SICI:
0021-8979(1994)76:10<5738:CSOSIG>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROCKING CURVE ANALYSIS; X-RAY-DIFFRACTION; DEPTH RESOLUTION; MULTILAYER STRUCTURES; ROOM-TEMPERATURE; LAYER; GAAS; PROFILES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
L. Dapkus et al., "CHARACTERIZATION STUDY OF STRAINED INXGA1-XAS GAAS SUPERLATTICES", Journal of applied physics, 76(10), 1994, pp. 5738-5743

Abstract

InxGa1-xAs/GaAs strained layer superlattices were studied by means ofdouble-crystal x-ray diffractometry (DCXD), transmission electron microscopy (TEM), and selected area x-ray photoelectron spectroscopy (SAXPS) depth profiling techniques. The quality of superlattices, strain in the sublayers, and their thickness and chemical composition were evaluated. The effect of the real superlattice structure on the shape of x-ray rocking curves has been revealed. It was concluded that full identification of nonperiodic defects and the initial stage of stress relaxation can be determined by combining DCXD and TEM methods. The results of SAXPS depth profiling were found to be in good quantitative agreement with DCXD and TEM data. The linear dependence of depth resolution Delta z on the sputtering depth, caused by sputtering induced development of heterointerface roughness was determined in SAXPS profiles.

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Documento generato il 29/11/20 alle ore 10:25:01