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Titolo:
INFLUENCE OF AL CONTENT-X ON HOT-ELECTRON NOISE IN ALX GA1-XAS N- COMPARISON WITH GAAS(NN+ DEVICES )
Autore:
DEMURCIA M; RICHARD E; VANBREMEERSCH J; ZIMMERMANN J;
Indirizzi:
UNIV MONTPELLIER 02,CTR ELECTR MONTPELLIER,CNRS,URA 391 F-34095 MONTPELLIER 5 FRANCE CNRS,PHYS COMPOSANTS SEMICOND LAB,URA 840 F-38042 GRENOBLE FRANCE UNIV LILLE 1,IEMN,DEPT HYPERFREQUENCES & SEMICOND,CNRS,UMR 9929 F-59655 VILLENEUVE DASCQ FRANCE
Titolo Testata:
I.E.E.E. transactions on electron devices
fascicolo: 11, volume: 41, anno: 1994,
pagine: 2082 - 2086
SICI:
0018-9383(1994)41:11<2082:IOACOH>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
M. Demurcia et al., "INFLUENCE OF AL CONTENT-X ON HOT-ELECTRON NOISE IN ALX GA1-XAS N- COMPARISON WITH GAAS(NN+ DEVICES )", I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2082-2086

Abstract

Hot electron noise measurements are performed in Si doped AlxGa1-xAs n+ nn+ devices, for three different Al concentrations: x = 0.15, 0.2, 0.25. Noise temperatures are obtained using a pulsed measurement technique as functions of electric field and frequency. Longitudinal diffusion coefficients D(E) are deduced at 4 GHz. Results are analyzed through the scattering mechanisms which greatly affect the electron velocity properties of AlxGa1-xAs materials. Comparisons with n+ nn+ GaAs devices are made.

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Documento generato il 02/04/20 alle ore 06:39:36