Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
SPIN-FLIP RAMAN-SCATTERING IN CDTE CD1-XMNXTE MULTIPLE-QUANTUM WELLS - A MODEL SYSTEM FOR THE STUDY OF ELECTRON-DONOR BINDING IN SEMICONDUCTOR HETEROSTRUCTURES/
Autore:
HALSALL MP; RAILSON SV; WOLVERSON D; DAVIES JJ; LUNN B; ASHENFORD DE;
Indirizzi:
UNIV E ANGLIA,SCH PHYS NORWICH NR4 7TJ NORFOLK ENGLAND UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 16, volume: 50, anno: 1994,
pagine: 11755 - 11763
SICI:
0163-1829(1994)50:16<11755:SRICCM>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
DILUTED MAGNETIC SEMICONDUCTORS; BAND-OFFSETS; EXCITONS; SUPERLATTICES; ENERGY; PHOTOLUMINESCENCE; SPECTROSCOPY; CD1-XMNXTE; EPILAYERS; BARRIERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
33
Recensione:
Indirizzi per estratti:
Citazione:
M.P. Halsall et al., "SPIN-FLIP RAMAN-SCATTERING IN CDTE CD1-XMNXTE MULTIPLE-QUANTUM WELLS - A MODEL SYSTEM FOR THE STUDY OF ELECTRON-DONOR BINDING IN SEMICONDUCTOR HETEROSTRUCTURES/", Physical review. B, Condensed matter, 50(16), 1994, pp. 11755-11763

Abstract

The spin-flip Raman scattering of electrons bound to donors in CdTe/Cd1-xMnxTe multiple-quantum-well structures at 1.6 K in magnetic fieldsup to 6 T has been studied for a range of samples forming two series in which, first, the CdTe quantum-well width and second, the Cd1-xMnxTe barrier composition x were varied systematically. For structures with x < 0.1, two spin-flip Raman bands are observed, which can be assigned to electrons located in the quantum wells and bound to donors located either in the quantum wells themselves or in the barriers of the structure. Measurements of the excitation spectra of the two Raman bandsand of the quantum-well photoluminescence support this assignment. A variational calculation allows us to simulate the form of the observedspectra and also gives a quantitative description of the dependence of the Raman peak positions on the well width and barrier composition. The calculation allows us to derive a value of 0.060+/-0.005 eV for the conduction-band offset when x=0.07.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/03/20 alle ore 08:27:37