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Titolo:
THERMODYNAMICS AND PHASE-EQUILIBRIA DATA IN THE S-GA-SB SYSTEM AUXILIARY TO THE GROWTH OF DOPED GASB SINGLE-CRYSTALS
Autore:
SESTAK J; LEITNER J; YOKOKAWA H; STEPANEK B;
Indirizzi:
ACAD SCI CZECH REPUBL,INST PHYS,DIV SOLID STATE PHYS,CUKROVARNICKA 10CR-16200 PRAGUE 6 CZECH REPUBLIC PRAGUE INST CHEM TECHNOL,FAC CHEM TECHNOL,DEPT SOLID STATE ENGN CR-16628 PRAGUE 6 CZECH REPUBLIC NATL INST MAT & CHEM RES,DEPT INORGAN MAT TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
Thermochimica acta
, volume: 245, anno: 1994,
pagine: 189 - 206
SICI:
0040-6031(1994)245:<189:TAPDIT>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-POTENTIAL DIAGRAMS; MOLECULAR-BEAM EPITAXY; IN-SB; SULFUR; ALLOYS; SEMICONDUCTORS; COMPUTER;
Keywords:
BINARY SYSTEM; PHASE EQUILIBRIUM; SEMICONDUCTOR; SOLID SOLUTION; TERNARY SYSTEM; THERMODYNAMICS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
94
Recensione:
Indirizzi per estratti:
Citazione:
J. Sestak et al., "THERMODYNAMICS AND PHASE-EQUILIBRIA DATA IN THE S-GA-SB SYSTEM AUXILIARY TO THE GROWTH OF DOPED GASB SINGLE-CRYSTALS", Thermochimica acta, 245, 1994, pp. 189-206

Abstract

An extensive survey of phase equilibria and thermodynamic data (DeltaH, S, C-p, Delta G) on solid and liquid phases is presented for Ga-Sb, S-Ga and S-Sb subsystems which includes tables of the limiting activity coefficients. The construction method for chemical potential diagrams has been applied in the form of log[a(Ga)/a(Sb)] versus log[P(S-2)/bar] plots, the usefulness of which is discussed. The ternary phase diagram has been estimated. Using minimization of Gibbs energy the equilibrium composition of coexisting phases in the S-Ga-Sb system has been evaluated regarding the determination of the maximum level of sulphur doping in GaSb single crystals grown by the Czochralski technique without encapsulant. The calculated concentration of dissolved sulphur in GaSb solid was 10(16)-10(17) atoms per cm(3), which is in good agreement with the experimentally measured values of about 10(17) atoms percm(3). After exceeding about 1.5 x 10(18) atoms per cm(3) in the melt, the second phase (Ga2S) started to separate spontaneously.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 12:01:49