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Titolo:
COPPER DRY-ETCHING TECHNIQUE FOR ULSI INTERCONNECTIONS
Autore:
MARKERT M; BERTZ A; GESSNER T;
Indirizzi:
CHEMNITZ UNIV TECHNOL,CTR MICROTECHNOL D-09107 CHEMNITZ GERMANY
Titolo Testata:
Microelectronic engineering
fascicolo: 1-4, volume: 35, anno: 1997,
pagine: 333 - 336
SICI:
0167-9317(1997)35:1-4<333:CDTFUI>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
M. Markert et al., "COPPER DRY-ETCHING TECHNIQUE FOR ULSI INTERCONNECTIONS", Microelectronic engineering, 35(1-4), 1997, pp. 333-336

Abstract

As a consequence of the well-known difficulties in reactive dry Cu patterning only a small number of processes has been published world-wide. Using a simple Cl-2 based chemistry including an intense ion bombardment as an alternative approach, the formation of thick sidewall films during etching (as proposed by other groups) is not necessary. As will be shown, a copper dry etching technique for interconnections down to 0.2 mu m has been developed. The line resistance of PVD- and CVD-Cuhas been measured indicating a good correlation with the calculated values. Finally, first electromigration resistance measurements of PVD-Cu lines have been performed.

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Documento generato il 14/07/20 alle ore 18:19:30