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Titolo:
MECHANISMS OF SUBOXIDE GROWTH AND ETCHING IN ATOMIC LAYER DEPOSITION OF TANTALUM OXIDE FROM TACL5 AND H2O
Autore:
AARIK J; KUKLI K; AIDLA A; PUNG L;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,INORGAN CHEM LAB,POB 55 FIN-00014 HELSINKI FINLAND TARTU STATE UNIV,INST EXPT PHYS & TECHNOL EE-2400 TARTU ESTONIA
Titolo Testata:
Applied surface science
fascicolo: 4, volume: 103, anno: 1996,
pagine: 331 - 341
SICI:
0169-4332(1996)103:4<331:MOSGAE>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; BETA-DIKETONATE; IN-SITU; EPITAXY; PRECURSORS; PENTOXIDE; REDUCTION; TA2O5;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
37
Recensione:
Indirizzi per estratti:
Citazione:
J. Aarik et al., "MECHANISMS OF SUBOXIDE GROWTH AND ETCHING IN ATOMIC LAYER DEPOSITION OF TANTALUM OXIDE FROM TACL5 AND H2O", Applied surface science, 103(4), 1996, pp. 331-341

Abstract

In the present study, the possible surface processes during the atomic layer deposition (atomic layer epitaxy) of tantalum oxide thin filmsfrom TaCl2 and H2O were studied. Surface mass exchange was detected by means of quartz crystalline mass sensor (QCM) during the growth process. Using the results of QCM measurements and those of electron-probecomposition analysis, Cl/Ta and O/Ta atomic ratios as well as stable surface concentration of Ta and Cl atoms in the intermediate surface layer were calculated versus growth temperature, The mechanisms of suboxide growth and etching in the continuous precursor flow was evaluatedon the basis of the measurement results and thermodynamical probability for different reactions.

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Documento generato il 01/12/20 alle ore 16:10:02