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Titolo:
LOW-TEMPERATURE ELECTRICAL TRANSPORTATION BEHAVIOR OF IN0.5GA0.5P GROWN ON GAAS(100) SUBSTRATE BY LIQUID-PHASE EPITAXY
Autore:
ZHANG B; LAN S; LI LQ; XU WJ; YANG CQ; LIU HD;
Indirizzi:
BEIJING UNIV,DEPT PHYS,NATL LAB MESOSCOP PHYS BEIJING 100871 PEOPLES R CHINA
Titolo Testata:
Solid state communications
fascicolo: 5, volume: 92, anno: 1994,
pagine: 419 - 422
SICI:
0038-1098(1994)92:5<419:LETBOI>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Keywords:
A SEMICONDUCTOR; A THIN FILMS; B EPITAXY; D ELECTRONIC TRANSPORT; D GALVANOMAGNETIC EFFECT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
B. Zhang et al., "LOW-TEMPERATURE ELECTRICAL TRANSPORTATION BEHAVIOR OF IN0.5GA0.5P GROWN ON GAAS(100) SUBSTRATE BY LIQUID-PHASE EPITAXY", Solid state communications, 92(5), 1994, pp. 419-422

Abstract

The Hall effect and resistivity measurement over a wide temperature range of 1.5 to 300 K for undoped InGaP epitaxial layer grown on GaAs (100) substrate by liquid phase epitaxy are reported for the first time. The conduction behavior of InGaP at low temperature similar to that of Ge single crystal has been observed. With the help of two-band model, the conduction properties are analysed and the carrier scattering machnisms are also established.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 15/07/20 alle ore 04:09:03