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Titolo:
SUBPICOSECOND GAIN AND INDEX NONLINEARITIES IN INGAASP DIODE-LASERS
Autore:
HALL KL; LENZ G; DARWISH AM; IPPEN EP;
Indirizzi:
MIT,LINCOLN LAB,DEPT ELECT ENGN & COMP SCI LEXINGTON MA 02173 MIT,LINCOLN LAB,ELECTR RES LAB LEXINGTON MA 02173 MIT,LINCOLN LAB LEXINGTON MA 02173
Titolo Testata:
Optics communications
fascicolo: 5-6, volume: 111, anno: 1994,
pagine: 589 - 612
SICI:
0030-4018(1994)111:5-6<589:SGAINI>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
QUANTUM-WELL LASERS; ALGAAS WAVE-GUIDES; SEMICONDUCTOR OPTICAL AMPLIFIERS; GROUP-VELOCITY DISPERSION; TIME-DOMAIN MEASUREMENTS; PHOTOEXCITED CARRIERS; REFRACTIVE-INDEX; PROBE TECHNIQUE; GROUP DELAY; DYNAMICS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
67
Recensione:
Indirizzi per estratti:
Citazione:
K.L. Hall et al., "SUBPICOSECOND GAIN AND INDEX NONLINEARITIES IN INGAASP DIODE-LASERS", Optics communications, 111(5-6), 1994, pp. 589-612

Abstract

Studies of active waveguides with short optical pulses provide information about fundamental carrier dynamics and nonlinear processes relevant to high speed modulation, amplification, and switching. We describe recent investigations of the gain and index nonlinearities in InGaAsP optical amplifiers operating in the 1.5 mum region of the spectrum. We have measured the group velocity dispersion, - lambdad2n(eff)/dlambda2, for these diodes using time domain reflectometry. We have used a novel heterodyne pump-probe technique to study the gain and refractiveindex nonlinearities; and we have performed short pulse saturation measurements that confirm predictions derived from these time-domain studies. Nonlinear gain compression is found to be due mainly to carrier heating and two-photon absorption. A small portion of the total response has been attributed to spectral hole burning. The index nonlinearities are dominated by carrier heating and by the instantaneous optical Kerr effect. We discuss how these time domain results, for both the real and imaginary parts of chi(3), can be related to other experimentaldeterminations of diode nonlinearities. In addition, we include results that go beyond the perturbational limit and show large rapid gain and index nonlinearities for high pump powers. These results will be discussed in the context of all-optical switching in active semiconductor waveguides.

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Documento generato il 02/07/20 alle ore 22:03:37