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Titolo:
BEAM INVESTIGATIONS OF D-2 ADSORPTION ON SI(100) - ON THE IMPORTANCE OF LATTICE EXCITATIONS IN THE REACTION DYNAMICS
Autore:
KOLASINSKI KW; NESSLER W; BORNSCHEUER KH; HASSELBRINK E;
Indirizzi:
MAX PLANCK GESELL,FRITZ HABER INST,FARADAYWEG 4-6 D-14195 BERLIN GERMANY
Titolo Testata:
The Journal of chemical physics
fascicolo: 8, volume: 101, anno: 1994,
pagine: 7082 - 7094
SICI:
0021-9606(1994)101:8<7082:BIODAO>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; INTERNAL-STATE DISTRIBUTIONS; PI-BONDED DIMERS; HYDROGEN DESORPTION; DISSOCIATIVE ADSORPTION; MONOHYDRIDE PHASE; H-2 DESORPTION; RECOMBINATIVE DESORPTION; ASSOCIATIVE DESORPTION; (2X1)-H MONOHYDRIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
79
Recensione:
Indirizzi per estratti:
Citazione:
K.W. Kolasinski et al., "BEAM INVESTIGATIONS OF D-2 ADSORPTION ON SI(100) - ON THE IMPORTANCE OF LATTICE EXCITATIONS IN THE REACTION DYNAMICS", The Journal of chemical physics, 101(8), 1994, pp. 7082-7094

Abstract

The adsorption of D-2 On Si(100) has been investigated by means of supersonic molecular beam techniques. We have succeeded in measuring thedependence of the molecular D-2 sticking coefficient S on surface temperature T-s and nozzle temperature T-n. The sticking coefficient increases gradually in the range 300 less than or equal to T-n less than or equal to 1040 K. The influence of increased upsilon=1 population hasnot been deconvoluted from the effects of translational energy alone. The dependence on T-s is more interesting. With an incident translational energy of 65 meV, S rises from a value insignificantly different from the background level to a maximum value of (1.5+/-0.1)X10(-5) at T-s=630 K. The decrease in the effective sticking coefficient beyond this T-s is the result of desorption during the experiment. Having established that S increases with both increasing molecular energy and increasing sample temperature, we have demonstrated directly for the first time that the adsorption of molecular hydrogen on Si is activated and that lattice vibrational excitations play an important role in the adsorption process.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 17:20:53