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Titolo:
STRUCTURAL STUDIES OF ACTIVE-CARBON USED IN THE GROWTH OF SILICON-CARBIDE CATALYST SUPPORT
Autore:
BENAISSA M; WERCKMANN J; EHRET G; PESCHIERA E; GUILLE J; LEDOUX MJ;
Indirizzi:
UNIV STRASBOURG 1,IPCMS,CNRS,UMR 46,SURFACES INTERFACES GRP,23 RUE LOESS BAT 69 F-67037 STRASBOURG FRANCE LAB CHIM MAT CATALYT F-67008 STRASBOURG FRANCE EHICS,IPCMS,MAT INORGAN GRP,CNRS,UMR 46 F-67008 STRASBOURG FRANCE
Titolo Testata:
Journal of Materials Science
fascicolo: 18, volume: 29, anno: 1994,
pagine: 4700 - 4707
SICI:
0022-2461(1994)29:18<4700:SSOAUI>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
GRAPHITE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
M. Benaissa et al., "STRUCTURAL STUDIES OF ACTIVE-CARBON USED IN THE GROWTH OF SILICON-CARBIDE CATALYST SUPPORT", Journal of Materials Science, 29(18), 1994, pp. 4700-4707

Abstract

The microstructure of active carbon used in the growth of a silicon carbide catalyst support has been studied by BET area measurements, electron diffraction and high-resolution electron microscopy. The microstructure of the active carbon is consistent with different distributions of basic structural units (BSUs). These BSUs increase in size under heat treatment by forming adjacent distorted columns. Ordering processes are discussed from geometrical considerations based on reciprocal patterns. The reactivity of the interface between the active carbon andSiO vapour is controlled by the proportion of the highly reactive sites in the active carbon surface structure.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/11/20 alle ore 14:15:47