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Titolo:
POLARIZATION OF THE SPONTANEOUS RADIATION OF STRESSED LASER HETEROSTRUCTURES
Autore:
PTASHCHENKO AA; DEYCH MV; MIRONCHENKO NB; PTASHCHENKO FA;
Indirizzi:
ODESSA UNIV,UL PETRA VELIKOGO 2 ODESSA 270100 UKRAINE
Titolo Testata:
Solid-state electronics
fascicolo: 4-6, volume: 37, anno: 1994,
pagine: 1255 - 1258
SICI:
0038-1101(1994)37:4-6<1255:POTSRO>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR DIODE-LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
A.A. Ptashchenko et al., "POLARIZATION OF THE SPONTANEOUS RADIATION OF STRESSED LASER HETEROSTRUCTURES", Solid-state electronics, 37(4-6), 1994, pp. 1255-1258

Abstract

Measurement system with a rotating polaroid was constructed allowing to detect the degree of the light polarization (rho) of 0.1% rho as a function of driving current (I) and axial stress (sigma) was studied for spontaneous output of the AlGaAs lasers at low pumping levels. It was found that in the range of sufficiently small currents rho linearlydepends on I and sigma. When extrapolated to I = 0, rho depends not only on sigma, but also on the light amplification parameters of the individual laser structure. These observations must be taken into account when one attempts to estimate the strain in the active layer of a diode laser through the polarization measurements. The Cassidy's one-dimensional model of the polarization effects in diode lasers was modified to include modulation of the optical absorption by the stimulated emission in the active region at very low pumping intensities.

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Documento generato il 07/07/20 alle ore 15:36:27