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Titolo:
OBSERVATION OF SWITCHING ENERGY-DEPENDENCE ON ILLUMINATING BEAM AREA IN THE VSTEP OPTOELECTRONIC SWITCH
Autore:
BEYZAVI K; LINKE RA; DEVLIN GE; OGURA I; NUMAI T; KASAHARA K;
Indirizzi:
PRINCETON UNIV,DEPT ELECT ENGN PRINCETON NJ 08544 NEC RES INST INC PRINCETON NJ 08540 NEC CORP LTD,OPTOELECTR RES LABS TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
IEEE photonics technology letters
fascicolo: 2, volume: 6, anno: 1994,
pagine: 227 - 230
SICI:
1041-1135(1994)6:2<227:OOSEOI>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
K. Beyzavi et al., "OBSERVATION OF SWITCHING ENERGY-DEPENDENCE ON ILLUMINATING BEAM AREA IN THE VSTEP OPTOELECTRONIC SWITCH", IEEE photonics technology letters, 6(2), 1994, pp. 227-230

Abstract

We have observed a strong dependence of the optical switching energy of a p-n-p-n VSTEP device on the area of the illuminated spot. We explain the area dependence in terms of a long diffusion time (approximately 1 mus) required for the photo-generated holes to reach a uniform distribution in the depleted p-layer and report results of a carrier diffusion calculation which supports this conclusion. This effect reducesthe required optical switching energy by as much as a factor of five for the devices measured.

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Documento generato il 28/09/20 alle ore 18:28:08