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Titolo:
HIGH-PERFORMANCE LITHOGRAPHY WITH ADVANCED MODIFIED ILLUMINATION
Autore:
KANG HY; KIM CH; LEE JH; HAN WS; KOH YB;
Indirizzi:
SAMSUNG ELECTR CO LTD,CTR ADV TECHNOL DEV KYONGGI DO SOUTH KOREA
Titolo Testata:
IEICE transactions on electronics
fascicolo: 3, volume: E77C, anno: 1994,
pagine: 432 - 437
SICI:
0916-8524(1994)E77C:3<432:HLWAMI>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Keywords:
MEMORY TECHNOLOGIES; PHOTOLITHOGRAPHY; OPTICS; ILLUMINATION; RESOLUTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
NO
Recensione:
Indirizzi per estratti:
Citazione:
H.Y. Kang et al., "HIGH-PERFORMANCE LITHOGRAPHY WITH ADVANCED MODIFIED ILLUMINATION", IEICE transactions on electronics, E77C(3), 1994, pp. 432-437

Abstract

A modified illumination technique recently developed is known to improve the resolution and DOF (depth of focus) dramatically. But, it requires substantial modification in optical projection system and has some problems such as low throughput caused by low intensity and poor uniformity. And it is very difficult to adjust illumination source according to pattern changes. To solve these problems, we developed a new illumination technique, named ATOM (Advanced Titled illumination On Mask) which applies the same concept as quadrupole illumination technique but gives many advantages over conventional techniques. This newly inserted mask gives drastic improvements in many areas such as DOF, resolution, low illumination intensity loss, and uniformity. In our experiments, we obtained best resolution of 0.28 mum and 2.0 mum DOF for 0.36mum feature sizes with i-line stepper, which is two times as wide as that of conventional illumination technique. We also obtained 0.22 mumresolution and 2.0 mum DOF for 0.28 mum with 0.45 NA KrF excimer laser stepper. For complex device patterns, more than 1.5 times wider DOF could be obtained compared to conventional illumination technique. From these results, we can conclude that 2nd generation of 64 M DRAM with0.3 mum design rule can be printed with this technology combined withhigh NA (>0.5) i-line steppers. With KrF excimer laser stepper, 256 MDRAM can be printed with wide DOF.

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Documento generato il 27/11/20 alle ore 15:26:09