Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
(BA0.75SR0.25) TIO3 FILMS FOR 256-MBIT DRAM
Autore:
HORIKAWA T; MIKAMI N; ITO H; OHNO Y; MAKITA T; SATO K;
Indirizzi:
MITSUBISHI ELECTR CORP,SEMICOND RES LAB AMAGASAKI HYOGO 661 JAPAN
Titolo Testata:
IEICE transactions on electronics
fascicolo: 3, volume: E77C, anno: 1994,
pagine: 385 - 391
SICI:
0916-8524(1994)E77C:3<385:(TFF2D>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Keywords:
(BA, SR)TIO3; FERROELECTRIC; DRAM; SPUTTERING; GRAIN SIZE EFFECT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
NO
Recensione:
Indirizzi per estratti:
Citazione:
T. Horikawa et al., "(BA0.75SR0.25) TIO3 FILMS FOR 256-MBIT DRAM", IEICE transactions on electronics, E77C(3), 1994, pp. 385-391

Abstract

Thin (Ba0.75Sr0.25) TiO3 (BST) films to be used as dielectric materials in 256 Mbit DRAM capacitors were investigated. These films were deposited by an rf-sputtering method at substrate temperatures of 480 to 750-degrees-C. As substrate temperature increases, the dielectric constant of the films also increases, from 230 to 550. BST films prepared at temperatures higher than 700-degrees-C show larger current leaks than films prepared at lower temperatures. A dielectric constant of 250,corresponding to a silicon oxide equivalent thickness (t(eq)) of 0.47nm, and a leak current density about 1 x 10(-8) A/cm2 were obtained in 30-nm-thick film deposited at 660-degrees-C. Both of these values are sufficient for use in a 256 Mbit DRAM capacitor.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 21:17:42