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Titolo:
INVESTIGATION OF CDS PASSIVATION LAYERS ON HG1-XCDXTE
Autore:
KACIULIS S; MATTOGNO G; VITICOLI S; MARINI ME; CESQUI F; ALFUSO S; MERCURI A;
Indirizzi:
CNR,IST CHIM MAT,CP 10 I-00016 ROME ITALY ALENIA I-00131 ROME ITALY
Titolo Testata:
Surface and interface analysis
fascicolo: 1-12, volume: 22, anno: 1994,
pagine: 197 - 201
SICI:
0142-2421(1994)22:1-12<197:IOCPLO>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
MERCURY CADMIUM TELLURIDE; ANODIC SULFIDE FILMS; NATIVE SULFIDES; INTERFACE; CHEMISTRY; SURFACES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
S. Kaciulis et al., "INVESTIGATION OF CDS PASSIVATION LAYERS ON HG1-XCDXTE", Surface and interface analysis, 22(1-12), 1994, pp. 197-201

Abstract

CdS thin films were deposited on sapphire substrates and on the HgxCd1-xTe epitaxial and single crystal samples by using chemical decomposition on thiourea and anodic non-aqueous sulphidation techniques, respectively. The chemical composition and depth profiles of deposited films were investigated by selected area XPS combined with Ar+ ion sputtering. Lateral homogeneity of CdS films was studied by using scanning Auger microscopy. Nearly stoichiometric CdS films were obtained on sapphire and HgxCe1-xTe. The thickness, chemical composition and sputteringrate at 2 keV ion energy were determined from XPS data. In both cases(either deposited on sapphire or on HgxCd1-xTe) the CdS films were found to be very non-homogeneous in thickness.

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