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Titolo:
ANODIC FILM ON LEAD ARSENIC ALLOY IN SULFURIC-ACID MEDIUM
Autore:
XIA SJ; ZHOU WF;
Indirizzi:
FUDAN UNIV,DEPT CHEM SHANGHAI 200433 PEOPLES R CHINA FUDAN UNIV,DEPT CHEM SHANGHAI 200433 PEOPLES R CHINA
Titolo Testata:
Journal of Applied Electrochemistry
fascicolo: 9, volume: 24, anno: 1994,
pagine: 894 - 899
SICI:
0021-891X(1994)24:9<894:AFOLAA>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
ANTIMONY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
S.J. Xia e W.F. Zhou, "ANODIC FILM ON LEAD ARSENIC ALLOY IN SULFURIC-ACID MEDIUM", Journal of Applied Electrochemistry, 24(9), 1994, pp. 894-899

Abstract

The phase composition, anodic behaviour and semiconducting propertiesof the anodic film on Pb-6 6 at % As alloy have been investigated. The linear relationship between i and t-1/2 shows that the anodic film growth is controlled by a diffusion mechanism. The experimental resultsshow that the anodic film contains t-PbO, PbO . PbSO4, 3PbO . PbSO4, and some arsenic compounds. The dielectric constant of the film is 2.8x 10(2) obtained from the capacitance-time relationship measured at 2500 Hz. The Mott-Schottky plot shows that the film is an n-type semiconductor. The flat-band potential is -0.56 V vs Hg/Hg2SO4, and the donor density is 7.2 x 10(15) cm-3 for the film obtained at 0.9 V vs Hg/Hg2SO4 for 2 h on a Pb-6 at % As electrode.

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Documento generato il 02/10/20 alle ore 01:34:35