Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES
Autore:
FERLETCAVROIS V; MUSSEAU O; LERAY JL; COIC YM; LECARVAL G; GUICHARD E;
Indirizzi:
CEA F-91680 BRUYERES CHATEL FRANCE CEA,DTA,LETI F-38041 GRENOBLE FRANCE
Titolo Testata:
IEEE electron device letters
fascicolo: 3, volume: 15, anno: 1994,
pagine: 82 - 84
SICI:
0741-3106(1994)15:3<82:COTSTH>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
SOI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
5
Recensione:
Indirizzi per estratti:
Citazione:
V. Ferletcavrois et al., "COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES", IEEE electron device letters, 15(3), 1994, pp. 82-84

Abstract

We propose a simple model to evaluate the sensitivity to heavy ions of SRAM's in different CMOS/SIMOX technologies. The critical Linear Energy Transfer LET(c) and the asymptotic cross section sigma characterize the sensitivity of a memory. Theoretical values of LET(c) and sigma are calculated according to intrinsic characteristics of the technology (thickness of the silicon layer, lateral bipolar amplification) and design parameters of the memory, LET(c) and sigma are then compared toexperiments.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 23:22:07