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Titolo:
PREDICTED PERFORMANCE OF FRANZ-KELDYSH - EFFECT OPTICAL REFLECTION MODULATORS AND COMPARISONS WITH SIMILAR MULTIPLE-QUANTUM WELL-BASED DEVICES
Autore:
LEESON MS; PAYNE FP;
Indirizzi:
MANCHESTER METROPOLITAN UNIV,DEPT ELECT & ELECTR ENGN,CHESTER ST MANCHESTER M1 5GD LANCS ENGLAND UNIV CAMBRIDGE,DEPT ENGN CAMBRIDGE CB2 1PZ ENGLAND
Titolo Testata:
IEE proceedings. Optoelectronics
fascicolo: 4, volume: 141, anno: 1994,
pagine: 257 - 264
SICI:
1350-2433(1994)141:4<257:PPOF-E>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
P-TYPE GAAS; CONCENTRATION-DEPENDENCE; N-TYPE; ELECTROABSORPTION; IN1-XGAXASYP1-Y; ABSORPTION; LIMITS; INP;
Keywords:
FRANZ-KELDYSH EFFECT; MULTIPLE QUANTUM WELL DEVICES; OPTICAL REFLECTION MODULATORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
M.S. Leeson e F.P. Payne, "PREDICTED PERFORMANCE OF FRANZ-KELDYSH - EFFECT OPTICAL REFLECTION MODULATORS AND COMPARISONS WITH SIMILAR MULTIPLE-QUANTUM WELL-BASED DEVICES", IEE proceedings. Optoelectronics, 141(4), 1994, pp. 257-264

Abstract

In the paper the electroabsorption and electrorefraction spectra are calculated for GaAs, InGaAsP and InGaAs. These are compared both whithexperimental results and data from the literature giving very good agreement. From these calculations the behaviour of simple reflection modulators operating at 885 nm, 1.32 mu m and 1.76 mu m is quantified for a 3 dB insertion loss. This produces contrasts (on:off) of approximately 3 dB at - 30 V bias for all three semiconductors above. By using a Fabry-Perot cavity formed by the end faces of the modulator devices these contrasts are shown to increase to 20 dB for GaAs and InGaAsP, and 6.9 dB for InGaAs at the same bias. This potential performance is compared to multiple quantum well devices which also make use of cavityeffects.

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Documento generato il 28/11/20 alle ore 04:30:28