Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
CLUSTER MODEL STUDY ON GAAS EPITAXIAL CRYSTAL-GROWTH BY AN ARSENIC MOLECULAR-BEAM .3. AS4 MOLECULAR-BEAM
Autore:
FUKUNISHI Y; NAKATSUJI H;
Indirizzi:
KYOTO UNIV,FAC ENGN,DEPT SYNTHET CHEM,SAKYO KU KYOTO 606 JAPAN KYOTO UNIV,FAC ENGN,DEPT SYNTHET CHEM,SAKYO KU KYOTO 606 JAPAN INST FUNDAMENTAL CHEM,SAKYO KU KYOTO 606 JAPAN
Titolo Testata:
Surface science
fascicolo: 1-2, volume: 316, anno: 1994,
pagine: 168 - 180
SICI:
0039-6028(1994)316:1-2<168:CMSOGE>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
VAPOR-PHASE EPITAXY; INTERACTION KINETICS; REACTION-MECHANISM; 111 SURFACE; STATES; MOCVD; AS-2;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
33
Recensione:
Indirizzi per estratti:
Citazione:
Y. Fukunishi e H. Nakatsuji, "CLUSTER MODEL STUDY ON GAAS EPITAXIAL CRYSTAL-GROWTH BY AN ARSENIC MOLECULAR-BEAM .3. AS4 MOLECULAR-BEAM", Surface science, 316(1-2), 1994, pp. 168-180

Abstract

We examined the mechanism of GaAs epitaxial crystal growth with an As4 cluster beam on the Ga-stabilized GaAs(100) surface using the cluster model and the Hartree-Fock and Moller-Plesset second-order perturbation methods. Our results indicate that when the surface is irradiated with the As4 beam, the As4 cluster is adsorbed at a ditch site of the GaAs surface and dissociated: two As atoms are dissociatively adsorbedonto the surface to give a new As-layer and the other two As atoms are released into vacuum as an As2 molecule. Alternatively, two As4 clusters can be coadsorbed on the surface and dissociated: four atoms of the two As4 clusters are dissociatively adsorbed on the surface to givea new As-layer and the other four As atoms are released into vacuum as an As4 cluster. Thus, the present results confirm a previously proposed reaction.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 15:29:50