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Titolo:
DESIGN AND CHARACTERIZATION OF THE BVX - AN 8-CHANNEL CMOS PREAMPLIFIER-SHAPER FOR SILICON STRIPS
Autore:
BRITTON CL; ALLEY GT; SIMPSON ML; WINTENBERG AL; YAREMA RJ; ZIMMERMAN T; BOISSEVAIN J; COLLIER W; JACAK BV; SIMONGILLO J; SONDHEIM W; SULLIVAN JP; LOCKYER N;
Indirizzi:
OAK RIDGE NATL LAB,POB 2008 OAK RIDGE TN 37831 FERMILAB NATL ACCELERATOR LAB BATAVIA IL 60510 LOS ALAMOS NATL LAB LOS ALAMOS NM 87545 UNIV PENN,DEPT PHYS PHILADELPHIA PA 19104
Titolo Testata:
IEEE transactions on nuclear science
fascicolo: 1, volume: 41, anno: 1994,
parte:, 2
pagine: 352 - 355
SICI:
0018-9499(1994)41:1<352:DACOTB>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
5
Recensione:
Indirizzi per estratti:
Citazione:
C.L. Britton et al., "DESIGN AND CHARACTERIZATION OF THE BVX - AN 8-CHANNEL CMOS PREAMPLIFIER-SHAPER FOR SILICON STRIPS", IEEE transactions on nuclear science, 41(1), 1994, pp. 352-355

Abstract

This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of +/-50 ns. The circuit has apitch (width) of 85 mum/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 mum p-wells CMOS. The 0 pF noise is330 e with a noise slope of 64 e/pF. The design approach is presentedas well as both test bench and strip detector measurements.

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Documento generato il 02/12/20 alle ore 05:28:17