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Titolo:
IN-SITU STUDY OF A STRONTIUM BETA-DIKETONATE PRECURSOR FOR THIN-FILM GROWTH BY ATOMIC LAYER EPITAXY
Autore:
AARIK J; AIDLA A; JAEK A; LESKELA M; NIINISTO L;
Indirizzi:
TARTU UNIV,ELECTROLUMINESCENCE & SEMICOND LAB TARTU 2400 ESTONIA UNIV HELSINKI,DEPT CHEM SF-00014 HELSINKI FINLAND HELSINKI UNIV TECHNOL,INORGAN & ANALYT CHEM LAB SF-02150 ESPOO FINLAND
Titolo Testata:
Journal of materials chemistry
fascicolo: 8, volume: 4, anno: 1994,
pagine: 1239 - 1244
SICI:
0959-9428(1994)4:8<1239:ISOASB>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; COMPLEXES; VOLATILE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
J. Aarik et al., "IN-SITU STUDY OF A STRONTIUM BETA-DIKETONATE PRECURSOR FOR THIN-FILM GROWTH BY ATOMIC LAYER EPITAXY", Journal of materials chemistry, 4(8), 1994, pp. 1239-1244

Abstract

Precursor properties of Sr(thd)2 (thd = 2,2,6,6-tetramethyl heptane-3,5-dione) have been investigated using in situ mass monitoring of thinfilms during atomic layer epitaxy growth cycles. H2O and H2S were used as the other source materials. The Sr(thd)2 source temperature, T(s), significantly affects the growth rate. At T(S) = 240-270-degrees-C, a decrease of growth rate and in some cases even etching of the grown film takes place. These phenomena can be explained by the decomposition of Sr(thd)2, which also explains the dependence of the growth rate on the reactor temperature, T(R), observed when T(S) < 240-degrees-C and 240 less-than-or-equal-to T(R)/degrees-C less-than-or-equal-to 400. The growth experiments were complemented and the conclusions supportedby separately studying (by mass spectrometry thermogravimetry, and differential thermal analysis) the thermal stability and fractionation of the precursor.

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Documento generato il 01/12/20 alle ore 16:37:21