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Titolo:
SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING
Autore:
BRAMBLETT TR; LU Q; HASAN MA; JO SK; GREENE JE;
Indirizzi:
UNIV ILLINOIS,DEPT MAT SCI,1101 W SPRINGFIELD URBANA IL 61801 UNIV ILLINOIS,COORDINATED SCI LAB URBANA IL 61801 UNIV ILLINOIS,MAT RES LAB URBANA IL 61801
Titolo Testata:
Journal of applied physics
fascicolo: 3, volume: 76, anno: 1994,
pagine: 1884 - 1888
SICI:
0021-8979(1994)76:3<1884:SGMEFS>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
INTERNAL-STATE DISTRIBUTIONS; CHEMICAL-VAPOR-DEPOSITION; HYDROGEN DESORPTION; SILICON EPITAXY; H-2 DESORPTION; DISILANE; ADSORPTION; SI(100); SI; SURFACE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
36
Recensione:
Indirizzi per estratti:
Citazione:
T.R. Bramblett et al., "SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING", Journal of applied physics, 76(3), 1994, pp. 1884-1888

Abstract

The growth rates R(Si) of Si films deposited on Si(001)2 X 1 from Si2H6 by gas-source molecular-beam epitaxy were determined as a function of temperature T(s) (500-950-degrees-C) and impingement flux J(Si2H6) (0.3-7.7 X 10(16) cm-2 s-1). R(Si) (T(s), J(Si2H6)) curves were well described using a model, with no fitting parameters, based upon dissociative Si2H6 chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si monohydride. The zero-coverage Si2H6 reactive stickingprobability in the impingement-flux-limited growth regime was found to be 0.036, more than two orders of magnitude higher than that for SiH4. B doping concentrations (C(B) = 5 X 10(16) - 3 X 10(19) cm-3) from B2H6 increased linearly with increasing flux ratio J(B2H6)/J(Si2H6) atconstant T(s) and decreased exponentially with 1/T(s) at constant J(B2H6)/J(Si2H6). Secondary ion mass spectrometry analyses of modulation-doped samples, revealed sharp profiles with no detectable B segregation. Hole mobilities in uniformly doped samples were equal to bulk values.

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Documento generato il 02/12/20 alle ore 18:06:05