Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
LARGE-AREA LOW-CAPACITANCE INP INGAAS MSM PHOTODETECTORS FOR HIGH-SPEED OPERATION UNDER FRONT AND REAR ILLUMINATION/
Autore:
HIERONYMI F; BOTTCHER EH; DROGE E; KUHL D; KOLLAKOWSKI S; BIMBERG D;
Indirizzi:
TECH UNIV BERLIN,INST FESTKORPERPHYS 1,HARDENBERGSTR 36 D-10623 BERLIN GERMANY
Titolo Testata:
Electronics Letters
fascicolo: 15, volume: 30, anno: 1994,
pagine: 1247 - 1248
SICI:
0013-5194(1994)30:15<1247:LLIIMP>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Keywords:
METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTODETECTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
4
Recensione:
Indirizzi per estratti:
Citazione:
F. Hieronymi et al., "LARGE-AREA LOW-CAPACITANCE INP INGAAS MSM PHOTODETECTORS FOR HIGH-SPEED OPERATION UNDER FRONT AND REAR ILLUMINATION/", Electronics Letters, 30(15), 1994, pp. 1247-1248

Abstract

Large-area long-wavelength metal-semiconductor-metal (MSM) photodetectors fabricated on the Fe-doped InP/InGaAs material system have been characterised under front and rear illumination employing different thicknesses of the photoactive layer. With a 350mum diameter detection area, theoretically limited capacitance values (0.75pF) and very low depletion voltages (< 1 V) were obtained. For an active layer thickness of 0.7mum, the devices show an external quantum yield of up to 60% and a bandwidth of 0.95 GHz at 10V bias.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 11/07/20 alle ore 14:31:49