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Titolo:
INVESTIGATION OF COPPER METALLIZATION INDUCED FAILURE OF DIODE STRUCTURES WITH AND WITHOUT A BARRIER LAYER
Autore:
BAUMANN J; KAUFMANN C; RENNAU M; WERNER T; GESSNER T;
Indirizzi:
TECH UNIV CHEMNITZ ZWICKAU,ZENTRUM MIKROTECHNOL D-09107 CHEMNITZ GERMANY
Titolo Testata:
Microelectronic engineering
fascicolo: 1-4, volume: 33, anno: 1997,
pagine: 283 - 291
SICI:
0167-9317(1997)33:1-4<283:IOCMIF>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIFFUSION-BARRIERS; THIN-FILMS; SILICON; CU; OXIDATION; SILICIDES; CU3SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
32
Recensione:
Indirizzi per estratti:
Citazione:
J. Baumann et al., "INVESTIGATION OF COPPER METALLIZATION INDUCED FAILURE OF DIODE STRUCTURES WITH AND WITHOUT A BARRIER LAYER", Microelectronic engineering, 33(1-4), 1997, pp. 283-291

Abstract

Different metallization systems Cu/Si, Cu/Ti/Si, Cu/W/Si and Cu/TiN (N/Ti ratio <1 and approximate to 1)/Si were prepared on n(+)p-diodes. After sequential annealing in H-2-atmosphere these structures were investigated by electrical and analytical methods. For a metallization without barrier layer the electrical breakdown is caused by the formation of Cu3Si. Randomly distributed reaction spots are visible on the silicon surface. For Ti and W the electrical failure occurs after annealing at 450 degrees C in H-2-atmosphere. The breakdown of diodes with TIN is first found for barrier layers with a N/Ti-ratio <1 after annealing at 650 degrees C. Stoichiometric TiN-barriers are stable after annealing at 650 degrees C. The electrical breakdown can be assigned to failure mechanisms determined by the barrier film properties.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 05:09:49