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Titolo:
EFFECT OF ANTIMONY ON THE SEMICONDUCTING PROPERTIES OF THE ANODIC PLUMBOUS OXIDE FILM FORMED IN SULFURIC-ACID-SOLUTION .3. STUDIES ON THE ANODIC SB2O3 FILM WITH AC-IMPEDANCE
Autore:
PU C; ZHOU WF; ZHANG YL;
Indirizzi:
FUDAN UNIV,DEPT CHEM SHANGHAI 200433 PEOPLES R CHINA SHANGRAO TEACHERS COLL,DEPT CHEM SHANGRAO 334001 PEOPLES R CHINA
Titolo Testata:
Huaxue xuebao
fascicolo: 4, volume: 52, anno: 1994,
pagine: 331 - 336
SICI:
0567-7351(1994)52:4<331:EOAOTS>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
CHI
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
C. Pu et al., "EFFECT OF ANTIMONY ON THE SEMICONDUCTING PROPERTIES OF THE ANODIC PLUMBOUS OXIDE FILM FORMED IN SULFURIC-ACID-SOLUTION .3. STUDIES ON THE ANODIC SB2O3 FILM WITH AC-IMPEDANCE", Huaxue xuebao, 52(4), 1994, pp. 331-336

Abstract

The semiconducting properties of the anodic film formed on antimony in 0.05 mol. dm-3H2SO4+0.5mol. dm-3Na2SO4 solution (30-degrees-C ) at 0.9V (vs. Hg/ Hg2SO4/ 0.05mol. dm-3H2SO4) for 3h were investigated using the a. c. impedance method. From the Mott-Schottky plot, the film isdemonstrated to be an n-type semiconductor. The flat-band potential of the film is -0.34V (vs. Hg / Hg2SO4/0.05mol. dm-3H2SO4), while the donor density is 4.0x 10(19)cm-3. The effect of the antimony on the donor density of the anodic plumbous oxide film is discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 10:46:43