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Titolo:
STRUCTURE AND STABILITY OF SPUTTER-DEPOSITED BETA-TUNGSTEN THIN-FILMS
Autore:
WEERASEKERA IA; SHAH SI; BAXTER DV; UNRUH KM;
Indirizzi:
UNIV DELAWARE,DEPT PHYS & ASTRON NEWARK DE 19716 INDIANA UNIV,DEPT PHYS BLOOMINGTON IN 47405 DUPONT CO INC,CENT RES & DEV,EXPT STN WILMINGTON DE 19898
Titolo Testata:
Applied physics letters
fascicolo: 24, volume: 64, anno: 1994,
pagine: 3231 - 3233
SICI:
0003-6951(1994)64:24<3231:SASOSB>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
MICROSTRUCTURE; SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
I.A. Weerasekera et al., "STRUCTURE AND STABILITY OF SPUTTER-DEPOSITED BETA-TUNGSTEN THIN-FILMS", Applied physics letters, 64(24), 1994, pp. 3231-3233

Abstract

The structure and stability of thin tungsten films prepared by radio frequency magnetron sputter deposition have been studied by x-ray diffraction and x-ray photoelectron spectroscopy. The structure of these films has been found to systematically evolve from the metastable A 15 beta-W phase to the equilibrium A2 alpha-W phase with decreasing oxygen impurity concentration. Within the beta-W phase a decrease in the concentration of incorporated oxygen results in a monotonic decrease in the lattice parameter of the unit cell until the beta-W phase eventually becomes unstable, and the alpha-W phase is formed.

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Documento generato il 09/07/20 alle ore 14:07:54