Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
SUBMICRON AND LOW-TEMPERATURE OHMIC CONTACTS ON DELTA-DOPED GAAS
Autore:
PIOTROWICZ PJA; ENGLAND JMC; CLEAVER JRA; STANLEY CR; HOLLAND MC;
Indirizzi:
UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECT RES CTR CAMBRIDGE CB3 OHE ENGLAND UNIV GLASGOW,DEPT ELECT & ELECT ENGN GLASGOW G12 8QQ LANARK SCOTLAND
Titolo Testata:
Applied physics letters
fascicolo: 23, volume: 69, anno: 1996,
pagine: 3528 - 3530
SICI:
0003-6951(1996)69:23<3528:SALOCO>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
N-GAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
P.J.A. Piotrowicz et al., "SUBMICRON AND LOW-TEMPERATURE OHMIC CONTACTS ON DELTA-DOPED GAAS", Applied physics letters, 69(23), 1996, pp. 3528-3530

Abstract

Practical nonalloyed ohmic contacts on delta-doped GaAs have been compared for AuGeNi (88:12:5)/and Cr metallizations to show the importance of metallization type for minimizing the contact resistance. They are shown to have low contact resistances even at 4.2 K and for contact sizes down to 240 nm diam. The effect of heating AuGeNi contacts to 270 degrees C is shown to be beneficial for large-area contacts but not for submicron contacts, implying that nonuniformity is introduced. (C)1996 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 06:47:29