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Titolo:
CATHODOLUMINESCENCE STUDIES OF ORIENTED DIAMOND FILMS
Autore:
BUHAENKO DS; SOUTHWORTH P; JENKINS CE; ELLIS PJ; STONER BR;
Indirizzi:
KOBE STEEL EUROPE LTD,10 NUGENT RD,SURREY RES PK GUILDFORD GU2 5AF SURREY ENGLAND KOBE STEEL USA LTD,CTR ELECTR MAT RES TRIANGLE PK NC 27709
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 4-6, volume: 3, anno: 1994,
pagine: 926 - 931
SICI:
0925-9635(1994)3:4-6<926:CSOODF>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; GROWTH; MICROSCOPY; SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
D.S. Buhaenko et al., "CATHODOLUMINESCENCE STUDIES OF ORIENTED DIAMOND FILMS", DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 926-931

Abstract

Transport properties of highly oriented diamond films have shown a marked improvement over random polycrystalline material. Scanning cathodoluminescence microscopy has been used to determine the type of defects present in oriented films and the way in which they are distributed in the layers. Our results show that undoped films contain significantnitrogen and silicon impurities, which are homogeneously distributed across individual diamond grains. In contrast, boron-doped layers are characterized by intense blue Band A and intrinsic edge emission: these signals arise from localized regions which correspond to grain boundaries. Between these regions, cathodoluminescence emissions are reduced and are similar to the undoped film; however, free-exciton emissionsare increased. These observations are discussed in terms of film structure and impurity incorporation, and it is suggested that compensation of boron by nitrogen impurities may explain the absence of green Band A and bound-exciton-related emission for these films.

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Documento generato il 02/12/20 alle ore 07:44:41