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Titolo:
CDSXSE1-X NANOCRYSTALS GROWN FROM SOLID-SOLUTION IN SILICATE GLASS - STRUCTURAL AND INTERFACIAL ASPECTS - HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND OPTICAL-ABSORPTION SPECTROSCOPY
Autore:
GANDAIS M; ALLAIS M; ZHENG Y; CHAMARRO M;
Indirizzi:
UNIV PARIS 06,CNRS,LMCP,4 PL JUSSIEU F-75252 PARIS 05 FRANCE UNIV PARIS 07 F-75252 PARIS 05 FRANCE
Titolo Testata:
Journal de physique. IV
fascicolo: C3, volume: 4, anno: 1994,
pagine: 47 - 56
SICI:
1155-4339(1994)4:C3<47:CNGFSI>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
CD(S,SE) QUANTUM DOTS; SIZE; CDS; CRYSTALLITES; HRTEM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
28
Recensione:
Indirizzi per estratti:
Citazione:
M. Gandais et al., "CDSXSE1-X NANOCRYSTALS GROWN FROM SOLID-SOLUTION IN SILICATE GLASS - STRUCTURAL AND INTERFACIAL ASPECTS - HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND OPTICAL-ABSORPTION SPECTROSCOPY", Journal de physique. IV, 4(C3), 1994, pp. 47-56

Abstract

CdS0.4Se0.6 nanocrystals have been formed through nucleation and growth processes during heat treatments at different temperatures (T = 600, 675 and 700-degrees-C) and annealing times (t = 1 hour to 8 days). Aregime of nucleation and growth seems to occur at T = 600-degrees-C. The growth process is dominant at T = 675 and 700-degrees-C. The average size of the semiconductor particles ranges between 2 and 15 nm according to the temperature and annealing time. Structural and interfacial aspects of the particles at early stages of the growth are presentedhere.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/07/20 alle ore 12:33:36